STRUCTURE PROFILE OF B+ ION IMPLANTED IRON FILM
نویسندگان
چکیده
منابع مشابه
Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate
Si1 xGex thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 · 10 cm ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to characterize these Si1 xGex films. Investigations by Rutherford backscattering spectroscopy/channeling (RBS/C...
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ژورنال
عنوان ژورنال: Le Journal de Physique Colloques
سال: 1988
ISSN: 0449-1947
DOI: 10.1051/jphyscol:19888796